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. Cullden, Kenneth), Polsley, Colin, Cifrara, Mortimer, Wolcott.. the bibliography, bibliography, bibliography, bibliography.. Jeffry Toocass, Curitiba, 1985. The «20,000 Word Database» of monographes, magazine. Characteristics of the 190-2040 Visible spectrum by. V6. -26.. Dialectic Materialism And The Oligarchic State Of Th.. self-education, books and the data. Mayer, Roger 2001; Applications Of Popular Music 10. N.p.. Glassten and Vickers, Michael A. 1993; editor… -Volume 9 No 41. Field of the Invention
The present invention generally relates to a high performance semiconductor device and a method for fabricating the same and, more particularly, to a high performance semiconductor device and a method for fabricating the same, in which a plurality of polysilicon layers are formed successively in the presence of a sputtering gas to provide a high density concentration of boron ions in the silicon substrate.
Recently, semiconductor devices are required to be highly integrated. In order to meet such a requirement, a width of a gate electrode should be reduced. When the gate width is reduced, resistance is increased in the gate electrode. However, in the case where the gate width is reduced so as to reduce the gate resistance, the gate capacity is increased. In order to prevent the increase of the gate capacity, the dielectric film between the gate electrode and a silicon substrate should be thinned. In this case, the threshold voltage is increased. In general, the drain current of a MOS transistor is proportional to the gate capacity and the threshold voltage. When the gate capacity is reduced to increase the drain current, it is necessary to reduce the threshold voltage for allowing the drain current to increase.
In order to reduce the threshold voltage, it is necessary to dope the impurity into the channel region of the silicon substrate. In the case where the impurity is doped to the channel region, the carrier concentration in the channel region is increased. When the impurity is doped to the channel region, so-called «dope-induced diffusion phenomenon» may occur. When the impurity is doped to the channel region, the conductivity of the channel region is raised. As a result, the electric field is concentrated in the vicinity of a junction between a drain region and a channel
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